| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
1999-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4886e6dc9d6fb87404ac0a98ab97b054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff213db630ec7d8507a95daed1e6845f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f1980f5bb7fa75d8849513a4f50f9e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c1f84a1fd4b64a0b0f59b5a54aa91ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_946c45af1b2eef0dcfa195f98cb0f616 |
| publicationDate |
2000-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2000223671-A |
| titleOfInvention |
Semiconductor integrated circuit device and method of manufacturing the same |
| abstract |
(57) [Problem] To prevent a ruthenium film from being eroded or lost during ashing of a photoresist film. SOLUTION: A platinum film 79 is formed on a ruthenium film 55 to be a lower electrode 51 of a DRAM memory cell, and a silicon oxide film 71 is further formed. After that, the photoresist film 70 is patterned on the silicon oxide film 71. Silicon oxide film 7 using photoresist film 70 as a mask 1 is etched to form a hard mask 72 made of a silicon oxide film. The photoresist film 70 is removed by ashing while the platinum film 79 is present on the ruthenium film 55. Thereafter, the platinum film 79 and the ruthenium film 55 are etched using the hard mask 72 as a mask to form the lower electrode 51. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005522874-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7346538-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100388453-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6664184-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4662717-B2 |
| priorityDate |
1999-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |