| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
1999-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9458b105dc732bd4e53c6dd1ad8db98 |
| publicationDate |
2000-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2000150508-A |
| titleOfInvention |
Method for forming insulating film of semiconductor device |
| abstract |
(57) [Problem] To provide an insulating film forming method which is an essential step of manufacturing a metal oxide semiconductor device. According to the method of forming an insulating film of a semiconductor device of the present invention, after cleaning a silicon wafer, loading the silicon wafer into a furnace, and supplying heavy water to the furnace to grow an insulating film on the silicon wafer. And the step of causing |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006022326-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017157812-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006066706-A |
| priorityDate |
1998-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |