http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000150484-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b51116f0d4394aeebaa559708220357c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 1998-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2e549f88a009c544098054a7ff32dd4 |
| publicationDate | 2000-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000150484-A |
| titleOfInvention | Plasma etching apparatus and etching method |
| abstract | (57) [PROBLEMS] Although the yield was low due to processing distortion in conventional polishing or grinding, the sample could not be made extremely thin. An object of the present invention is to provide an apparatus for processing a semiconductor wafer having a thickness, and to supply pellets having excellent heat radiation characteristics at a high yield at a low cost. An active species gas generated by plasma is applied to a sample surface in a beam form from an etching nozzle, and is locally etched without leaving processing distortion. Processing is performed at a high etch rate while moving the sample by the configuration of the etching nozzle and the configuration in which an exhaust head and an air supply nozzle are added to the periphery of the etching nozzle. According to the present invention, uniform and high-speed etching of a semiconductor wafer can be performed in a short time by the configuration of an etching nozzle and the configuration of an exhaust head and an air supply gas disposed around the nozzle. In the method of processing the back surface of the semiconductor wafer into a thin layer by the apparatus of the present invention, since the crystal has no processing distortion, it can be formed to a very thin thickness with a high yield, and is particularly effective for the back surface processing of a compound semiconductor which is easily broken. I understood. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4635478-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004253820-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7164095-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7271363-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7806077-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7189939-B2 |
| priorityDate | 1998-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.