http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000124198-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f97f0fa258a008bf056ad04b7f380dda
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
filingDate 1998-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2261689ad377ef0bd99dd7a5af204765
publicationDate 2000-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000124198-A
titleOfInvention Plasma etching apparatus and plasma etching method
abstract PROBLEM TO BE SOLVED: To monitor an etching processing state at a high S / N ratio and detect an etching end point at a high S / N ratio. SOLUTION: In plasma etching, an etching gas is made different from an isotope composition ratio of a naturally occurring element, or an etching gas, an etching object, and the like are determined for at least one kind of element contained in a detection substance. The isotope composition ratio of the constituent elements is made different. By making the isotope composition ratio different, it is possible to cause a difference in the mass of a detection substance having the same atomic composition detected by mass spectrometry according to the stage of the etching treatment. By mass spectrometry, a detection substance obtained from an etching target and a detection substance obtained from a substance other than the etching target are separately detected, whereby a change in the etching target is detected without being affected by a noise signal. Is monitored at a high S / N ratio.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100397038-C
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priorityDate 1998-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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