http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000100806-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_68e9be2cfe95ede2cc7623297aec43bf |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02301 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1999-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c48aecb90787246feecfb8448d8f038 |
| publicationDate | 2000-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000100806-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | [PROBLEMS] To provide a method for manufacturing a semiconductor device capable of preventing the growth of a natural oxide film and the generation of contaminant particles even when a number of unit processes are sequentially performed. The method of manufacturing a semiconductor device according to the present invention includes the step of forming a first conductive layer on a semiconductor substrate in a method of manufacturing a semiconductor device using a semiconductor processing apparatus having at least one reactor module. Patterning and etching the first conductive layer to form the lower electrode 230; and applying a chemical vapor deposition process to the capacitor dielectric layer 2 on the lower electrode 230 in a reactor of the processing apparatus. The method includes a step of forming the upper electrode 250 and a step of forming the upper electrode 250 on the capacitor dielectric film 240, and a part or all of the steps can be performed consistently. |
| priorityDate | 1998-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.