http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000068256-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f5dfbc3f20fded5e95a522d3f286729a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_284607f933f685523d71cb13e57dd17e |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate | 1999-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13996f23daa3b1787fa910f6c1a54f08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7e021ffb8b8c3a9bc8e62d4ed441baa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04a5e2f2ca84698904647101ed61d4b9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_797da4041d5d0305e247c0588b1d3b1c |
publicationDate | 2000-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2000068256-A |
titleOfInvention | Wafer etching method |
abstract | (57) [PROBLEMS] To suppress generation of white turbidity on a wafer surface during etching by adding hydrogen gas, ammonia gas, or a mixed gas containing any of these gases to sulfur hexafluoride gas. In addition, the present invention provides a wafer etching method which enables high-quality wafer mirror processing. SOLUTION: SF6 gas G1 of cylinder 31 and cylinder 3 A mixed gas obtained by mixing the H 2 gas G 2 with the H 2 gas at a predetermined ratio is supplied to the discharge tube 2, and the microwave M is supplied to the microwave oscillator 4. To oscillate and cause a plasma discharge. And the nozzle part 2 0 by locally etching the surface of the silicon wafer W with the active species gas G injected from 0. Flatten the entire surface. |
priorityDate | 1998-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.