http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000049148-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1999-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f29feb982d4ca2ddb7553a29bf40efd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d587f5657eb957a68b1d088f3e6f3ac8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90d7a198c440ada1e372b0fa9f4a5ace http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58beedfd04e8a74cff70e7210504c2e9 |
| publicationDate | 2000-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000049148-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Problem] To provide a method of manufacturing a semiconductor device in which the contact resistance between a contact plug and a conductive layer is improved. A damaged layer is thinly formed on an upper surface of a contact plug by ions accelerated during an etch back process. Such a damaged layer acts as a factor to increase the resistance at the time of contact with polysilicon or the like of the second conductive layer formed after the contact plug. In order to solve this problem, in the present invention, the damaged layer is removed by dry etching using an oxygen gas or a mixed gas obtained by adding a fluoride gas to the oxygen gas. According to such a method of manufacturing a semiconductor device, the contact resistance can be improved by removing the damaged layer acting as a factor of increasing the contact resistance on the surface of the contact plug by dry etching. |
| priorityDate | 1998-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.