http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000036598-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13454
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1237
classificationIPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 1998-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_402c106dc49f294241ff10bf458d5d0e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_968eb5516a1559e89bf819bb3cbc3261
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf9d0fd32da3efe5212e7f29270be314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da845e0c0666703c36355238b8206e91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
publicationDate 2000-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000036598-A
titleOfInvention Semiconductor device including semiconductor circuit including semiconductor element and method for manufacturing the same
abstract (57) [PROBLEMS] To provide different LDDs simultaneously on the same substrate. It is an object of the present invention to provide a method for manufacturing a highly productive TFT having a structure and a structure thereof. That is, the present invention provides a novel structure of a TFT and a manufacturing process with high productivity. SOLUTION: By using a heat-resistant Ta film or a film containing Ta as a main component as a wiring material and further covering with a protective layer, a heat treatment at a high temperature (400 to 700 ° C.) can be performed, In addition, by using the protective layer as an etching stopper, in the peripheral driving circuit portion, a TFT having an LDD structure by a self-alignment process (self-alignment) using the sidewall 126 is arranged, In the pixel matrix portion, an LDD by a non-self-alignment process (non-self-alignment) using the insulator 125 is used. Arrange TFT with structure
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8513669-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9859114-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101507318-B1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8253141-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1058310-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001326362-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7601572-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772778-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4633434-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7317209-B2
priorityDate 1998-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID947
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23956
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578708
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426098968
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559477
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458391465
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23932
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID69667
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556970
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID416641266
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425270609
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23976
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23963
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419405613
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6327157

Total number of triples: 71.