| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0b08374cf0cad9c6f3b663da00787c13 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02008 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
1999-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a774bccd60c85665a2339c5f9fc6cd1c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06f562ccb5a0b73ee63ffc369c0d469b |
| publicationDate |
2000-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2000012411-A |
| titleOfInvention |
Ultra-flat silicon semiconductor wafer and method of manufacturing semiconductor wafer |
| abstract |
(57) Abstract: An ultra-flat silicon wafer used in the semiconductor industry for producing electronic components having a line width of 0.13 μm or less. SOLUTION: The following series of process steps which influence the flatness of the semiconductor wafer: a) a step of cutting the semiconductor wafer from a crystal; b) a step of flattening the semiconductor wafer by a grinding process step; c) an erosion type Etching, that is, removing damaged crystal regions near the surface by utilizing a plasma assisted etching process; d) performing plasma assisted etching with local resolution; and e) polishing the semiconductor wafer without stripes. The method of having. GBIR up to 0.2 μm and 0.13 up to A silicon semiconductor wafer having a flatness expressed as SFQR max of μm is prepared. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7028353-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101591803-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022224637-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7582221-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009289925-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4863409-B2 |
| priorityDate |
1998-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |