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filingDate 2004-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2005-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-2406706-A
titleOfInvention Real-time gate etch critical dimension control by oxygen monitoring
abstract In a process for controlling an etching rate for plasma-etch trimming a photoresist during manufacture of a transistor gate, an etchant gas concentration, specifically the oxygen radical concentration, and an inert gas concentration are determined and the latter concentration is used to normalize the etchant gas concentration. The normalized value is compared with a predetermined desired etchant gas concentration and the flow of etchant gas into the processing chamber 50 is controlled in response. To minimize undesirable anisotropic chemical etching during the plasma etching, a passivating gas may be introduced into the chamber, the concentration of which may be monitored.
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