http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2370915-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1c5f332dddaff914ed798fc54999535 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76235 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2001-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_338652897555aa3da5461982d851236d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79c3ffad78764c4f501a632c68df172c |
| publicationDate | 2002-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-2370915-A |
| titleOfInvention | Trench oxide structure having rounded corners |
| abstract | A pad oxide layer 44 and a silicon nitride layer 46 are formed on a semiconductor layer 12, and a trench 48 is formed by anisotropic etching. The pad oxide 44 is etched using HF to form a recess 50 exposing the top surface of the semiconductor layer adjacent to the trench. Subsequently an angled implant 54 of an oxidation enhancing species into the walls 30 of the trench is performed, in the region of the upper trench corners (34). The oxidation enhancing species may be oxygen, silicon, helium or argon. The trench is then oxidised with a relatively low thermal budget, such as 1100{C for 5 minutes. Due to the selective implant of the oxidation enhancing species, the oxidation causes the upper corner of the trench (34) to have a greater radius of curvature than the lower corner of the trench (38). Consequently, the intensity of electric fields generated about the trench structure are reduced. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8034689-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2073256-A1 |
| priorityDate | 2000-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.