| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate |
1999-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9458b105dc732bd4e53c6dd1ad8db98 |
| publicationDate |
2000-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
GB-2342226-A |
| titleOfInvention |
Growing a deuterium containing insulation layer |
| abstract |
An oxide or oxynitride layer is grown on a silicon substrate in a deuterium containing atmosphere in a furnace. The insulation layer may be grown in a deuterium oxide atmosphere. The layer may have a multilayer structure with a conventional insulating layer either overlying or underlying the deuterium oxide/oxynitride layer. The atmosphere in the furnace may be purely deuterium oxide or have a conventional oxidising gas component (ie oxygen, nitrogen monoxide or nitrogen dioxide). The leakage and breakdown characteristics of the insulation film are improved due to the formation of strong silicon-deuterium bonds. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107154354-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102016114940-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107154354-B |
| priorityDate |
1998-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |