| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1998-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a768b17cf92ce35c85a3162c34b2033e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c974c0a6fd4fcaa39e36b043e98cd4ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca2ae61307e8e4b4c5e2b02dd421ce91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c14f9b3b96d45ca9261d30adbf2ac829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_904153362298f836f8385e3a4c1c41fc |
| publicationDate |
1999-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
GB-2338594-A |
| titleOfInvention |
A method of forming a selective metal layer |
| abstract |
In a method of forming a selective metal layer a sacrificial metal layer is selectively deposited on a conductive layer by supplying a sacrificial metal source gas which deposits selectively on a semiconductor substrate having an insulating film and the conductive layer. Sacrificial metal atoms and a halide are formed, and the sacrificial metal layer is replaced with a deposition metal layer such as titanium (Ti) or platinum (Pt), by supplying a metal halide gas having a halogen coherence smaller than the halogen coherence of the metal atoms in the sacrificial metal layer. If such a process is used to form a capacitor lower electrode or form an ohmic layer on the bottom of a contact hole, a metal layer can be selectively formed at a temperature of 500‹C or lower. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170321-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9905414-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8815678-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8212299-B2 |
| priorityDate |
1998-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |