Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa355ca64f7649683f814ec1c912062c |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28512 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-586 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5853 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58 |
filingDate |
1997-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85f88ce734c7e3bf688b5ea6c900cb62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbec45d821f0609bc1e95d2b40d1778f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f32199d798c2a7d003861c8346012547 |
publicationDate |
1998-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
GB-2319533-A |
titleOfInvention |
Methods of forming a barrier layer based on titanium nitride |
abstract |
Methods of forming a barrier layer including depositing a layer of Titanium Nitride and subsequently nitriding the surface of that layer. In one embodiment the Titanium Nitride layer is exposed to Oxygen prior to the nitriding step. In another a layer of titanium nitride is exposed to activated nitrogen so that any free surface titanium in the layer is nitrided to form titanium nitride. Another method includes initially depositing a barrier layer of titanium nitride, reactivating the barrier layer and deposition the conductive material. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6700202-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6547934-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6946401-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2290123-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6734102-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6297147-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6794311-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8183150-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7053002-B2 |
priorityDate |
1996-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |