http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2317494-A

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filingDate 1997-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5600eb090753ba8ac9140ffebba8e91c
publicationDate 1998-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-2317494-A
titleOfInvention Dry etching
abstract In the dry etching of an article 1, e.g. a silicon nitride layer on a semiconductor substrate, in which the article is placed in the space 14 between two electrodes 3,4 and a reactive gas such as CF 4 is fed into the space through holes 5a in a plate 5 attached to one of the electrodes, a plasma being generated in the space e.g. by an hf source 8, none of the components which bound the space 14 are made of, or contain, aluminium. Contamination is therefore avoided. The plate 5 can be made of silicon, an annular member 15 surrounding the article 1 can be made of the same material as the article, e.g. silicon, and an annular member 6 surrounding the plate 5 can be made of an organic material e.g. polyimide. The electrode temperature may be regulated to 30-50{ C, and an optical end point controller may be provided to determine when etching should cease.
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priorityDate 1996-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.