| abstract |
A photodetector device includes a light receiving part 1 such as a photodiode array, a signal reading-out part 2 such as a silicon charge coupled device first bumps for electrically connecting the light receiving pant and the signal reading-out part, a test element 15, 16 disposed on the light receiving part, a wiring 26 disposed on the signal reading-out part, and a second bump 3 arranged so as to electrically connect the test element and the wiring. A probe card is touched on the wiring of the signal reading out part and a characteristic of a pn junction of the light receiving part is thus measured. Therefore, the characteristic of a test element provided on the light receiving part can be measured after it is flip-chip bonded, whereby fault analysis can be easily performed. The device may be an infra red imager. <IMAGE> |