| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e9ec95f75bc5dcc8f2c6f36fd3ee1ca6 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-5346 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
1981-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
1981-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
GB-2068286-A |
| titleOfInvention |
Reactive sputter etching of silicon |
| abstract |
Highly selective etching of silicon, relative to silicon dioxide and other common masking materials, can be achieved by reactive sputter etching using a plasma derived from chlorine. The etching is highly uniform and free from loading effects. For monocrystalline silicon and undoped polycrystalline silicon the etching is anisotropic. For doped polycrystalline silicon the etching can be controlled to by anywhere between isotropic and completely vertical. <IMAGE> |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5304828-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5149676-A |
| priorityDate |
1980-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |