http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1291448-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e9ec95f75bc5dcc8f2c6f36fd3ee1ca6 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-117 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-106 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28581 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-291 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 |
| filingDate | 1969-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d8ace4b75b345341c7c760907d9adaf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3baf221be92e7f4f388d4e5261b5a7e6 |
| publicationDate | 1972-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1291448-A |
| titleOfInvention | Methods of making barrier layer devices |
| abstract | 1291448 Semi-conductor devices WESTERN ELECTRIC CO Inc 21 Nov 1969 [22 Nov 1968] 56971/69 Heading H1K An insulating guard ring defining the periphery of a planar rectifying surface barrier on a Si substrate and extending into the surface beyond the depth of the rectifying barrier is formed by means of a gas plasma of oxygen, nitrogen or carbon or combination thereof such as NO+ or CO<SP>+</SP>. The barrier may be a metal/ semi-conductor contact, e.g. Al on Si, but in the embodiment shown it comprises a layer 13 of a silicide of a metal such as Ni, Ti, Zr, Hf, or a Pt-group metal on an N type Si body 11. The silicide 13 is formed by heating the body after evaporation or sputtering of the appropriate metal, either over the entire surface or, as shown, within a window in an oxide layer 12 produced by steam or plasma oxidation or by pyrolytic deposition. The silicide 13 is covered with layers of Ti 14 and Pt 15 and a central portion of these layers is masked with a thicker layer 16 of Au. The exposed areas of Ti and Pt are then rernoved by back-sputtering, and the thus exposed silicide is converted to oxide extending beyond the depth of the remaining silicide 13 by means of a high energy oxygen plasma. If Pt silicide is used it must first be removed by back-sputtering, since it resists oxidation. In a second embodiment a metal silicide layer is formed over the entire surface of a Si body (21), Fig. 2 (not shown), and a localized area of this layer is masked with a layer (23) of a metal such as Au, Ti, Al, Ta, Nb, W, Zr or Hf, to which leads may next be applied. The whole surface is then plasma-oxidized to a level (24) below the Si/ silicide interface, and the portion (22) of silicide underlying the metal mask (23) is left undisturbed, defining a planar rectifying barrier with the Si body (21) surrounded by an insulating guard ring. |
| priorityDate | 1968-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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