http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1107577-A
Outgoing Links
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| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c72d118f5664072de841f9c5c34b9d99 |
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| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-051 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-051 |
| filingDate | 1965-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1968-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1107577-A |
| titleOfInvention | Improvements in semiconductor diodes |
| abstract | 1,107,577. Semi-conductor devices. GENERAL ELECTRIC CO. 12 Aug., 1965 [4 Sept., 1964], No. 34610/65. Heading H1K. A semi - conductor diode comprises a pair of spaced opposed electrodes 2, 4, a glass, ceramic or like insulating casing 40 sealed to the electrodes to form an envelope therewith, a body 18 of monocrystalline semi - conductor material, preferably silicon, disposed between the electrodes and spaced from the casing, a layer 26 of insulating material, preferably silicon dioxide, on one of the major faces of the body, a contact button 50 of the same monocrystalline semiconductor material epitaxially formed on a portion of the face exposed by an aperture, 27 in. the layer 26 and overlapping the layer around the aperture a P-N junction 20 in the semi-conductor material between the protruding portion of the button and the opposite major face of the body, the periphery of the junction terminating at and being covered by the insulating layer, and electrically conductive metallic contact regions bonding the electrode 2 to the contact button and the electrode 4 to the opposite major face. The electrodes have sealing portions 6, 8 the end aces of which are plated or otherwise coated with metallic contact layers 14, 16 made of copper or silver or an alloy thereof, and the top of the button and the. bottom of the body are provided with solder layers 32, 30 adapted to make eutectic bonds with the contact layers at a temperature below the sealing temperature of the casing 40. Layer 32 preferably consists predominantly of silver which is electroplated on and alloyed in to the button, and layer 30 preferably consists of silver which may contain up to 1% of a doner impurity such as arsenic, to preclude the formation of a rectifying contact, and from 20 to 40% by weight of gold. Thin gold layers may be provided between the solder layers and the semi-conductor material. The semi-conductor body 18 comprises an N-type region 24 which may contain an N + region 25, and a thin P-type button 50 is epitaxially deposited or grown on the body 18 by any suitable process, e.g. the iodine vapour transport process. The P-N junction may be formed at or near the junction between the body and the button, thus eliminating the region 22. |
| priorityDate | 1964-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.