http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2970115-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b8d7a963516c60934729f785cfe5699f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2010-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c315bd22c462dfb9de4be6d889b1276d |
| publicationDate | 2012-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | FR-2970115-A1 |
| titleOfInvention | METHOD FOR ETCHING A PROGRAMMABLE MEMORY MICROELECTRONIC DEVICE |
| abstract | The present invention relates to a method for etching a programmable memory microelectronic device (10) comprising a substrate (1) covered by at least the following successive layers: a first electrode (2) based on a first metal element, a layer (4) of chalcogenide doped with a second metal element; a second electrode (5) based on a third metal element; an electrically conductive layer (6) of the diffusion barrier type; and a hard mask. (7), the method comprising a step of etching with at least one inert gas plasma the hard mask (7), the electrically conductive layer (6), the second electrode (5), and the layer chalcogenide (4), the etching step being characterized in that it is carried out by sputtering at a temperature strictly below 150 ° C, preferably below 120 ° C, and particularly preferably at a temperature below 100 ° C. |
| priorityDate | 2010-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.