| abstract |
The present invention relates to a method for passivation of the flanks of a semiconductor component and in particular of a thin film transistor (TFT) making it possible to reduce conduction in the blocking state. This method is characterized by the fact that it comprises a step of passivation of the etched faces (41, 42; 15, 16; 27, 28) of the semiconductor level (4, 12, 21) of the mesa (4, 5, 9 ), before removing a mask (9) used during the engraving. This process is particularly well suited to TFT manufacturing processes used in liquid crystal flat screens. |