http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2716547-A1

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filingDate 1995-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a46ef6eb458fb053605f74675bdfd2d0
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publicationDate 1995-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber FR-2716547-A1
titleOfInvention Method for forming a resist pattern and for manufacturing a semiconductor device.
abstract The invention relates to a method for forming a resist pattern, characterized in that it comprises the steps of forming a resist layer (2b) by applying a resist to the surface of an element (1) which must being processed, the resist containing component A capable of expanding in volume by chemical reaction, exposing and developing the resist layer to form a pattern having an opening and chemically reacting a fluid containing component B with component A by fluid contact with component A to change the size of the opening (4b) of the resist layer, component B being capable of increasing the volume of component A by chemical reaction with component A. This method can be implemented implemented to manufacture a semiconductor device.
priorityDate 1994-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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