| abstract |
The present invention relates to a method of manufacturing thin film transistors (TFT), with a direct stepped structure and a low number of mask levels, making it possible to make a contact between the gate of a transistor and the source or the drain of the same. or another transistor, and can be used for the manufacture of liquid crystal flat screens, in particular on screens with integrated control electronics. The method of manufacturing direct stepped thin-film transistors (20; 23; 24) with four mask levels according to the invention is characterized in that it comprises the following steps:. deposition and etching of a first conductive level (11) on an insulating substrate (10) so as to form a source (1) and a drain (2),. deposition and etching of a semiconductor level (13) alone or followed by a first insulating level (16) joining the source (1) and drain (2),. deposition and etching of a second insulating level (14),. deposition and etching of a second conductive level (15) forming the gate (22) of the transistor (20, 23). |