http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2587838-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d188ec23eddac02e70cfb65844dd4fd |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate | 1985-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16e5d2372d86cd08d816f7b0591ef891 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_388e1e38474171e6a41d6a3ec1f0da5a |
| publicationDate | 1987-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | FR-2587838-A1 |
| titleOfInvention | METHOD FOR FLATHING THE SURFACE OF A SEMICONDUCTOR DEVICE USING SILICON NITRIDE AS INSULATING MATERIAL |
| abstract | PROCESS FOR FLUSHING THE SURFACE OF A SEMICONDUCTOR DEVICE WHICH INCLUDES A SUBSTRATE CARRYING ON ITS SURFACE A CONTACT CONFIGURATION, PROCESS CONSISTING ESSENTIALLY TO BE CARRIED OUT SUCCESSIVELY: A. DEPOSIT OF A SILICON NITRIDE LAYER; B. A DEPOSIT OF A LAYER OF WHICH THE FREE SURFACE IS SENSITIVELY FLAT; C. A GRADUAL ATTACK, BY PLASMA, OF THE LACQUER LAYER UNTIL THE MOST PREVIOUS PORTIONS OF THE SILICON NITRIDE LAYER ARE COMPLETELY DISCOVERED, THE FULL APPEARANCE OF THESE MOST PREVIOUS PORTIONS BEING DETECTED BY RECORDING OF THE VARIATIONS IN THE INTENSITY OF A NITROGEN EMISSION LINE; D. A SIMULTANEOUS PLASMA ATTACK ON THE SILICON NITRIDE LAYER AND THE REMAINING LACQUER UNTIL THE CONTACT CONFIGURATION COMES OUT COMPLETELY. THIS PROCESS IS CHARACTERIZED IN THAT THE CONDITIONS OF THE ATTACK ARE CHOSEN SUCH THAT THE ATTACK SPEED OF THE LACQUER IS GREATER THAN THE ATTACK SPEED OF THE SILICON NITRIDE, THIS IN ORDER TO DETECT WITH INCREASED SENSITIVITY TO THE LACQUER. HELP OF THE SAID REGISTRATION, THE FULL APPEARANCE OF THE CONTACT CONFIGURATION. APPLICATION TO SEMICONDUCTOR COMPONENTS. |
| priorityDate | 1985-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.