Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6bd4720aefb28835b9bfc5ff805f891b |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5389 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-486 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4803 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065 |
filingDate |
2019-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c1c0beb219029e491d28ec6129a1c31 |
publicationDate |
2021-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-3881352-A1 |
titleOfInvention |
Methods to design and uniformly co-fabricate small vias and large cavities through a substrate |
abstract |
A method of forming concurrently openings in a substrate or wafer or a portion of substrate or wafer openings therein at least one of the openings has a relatively high aspect ratio and another one of the openings has a relatively low aspect ratio, the method comprising: bonding the substrate or wafer or a portion of substrate or wafer to a carrier substrate; forming a ring trench in the substrate or wafer or in a portion of the substrate or wafer, the ring trench having an outer perimeter that corresponds an outer perimeter of the another one of the openings having said relatively low aspect ratio and having an inner perimeter spaced from the outer perimeter by a predetermined distance; forming an opening in said substrate or wafer or in a portion of substrate or wafer having said high aspect ratio concurrently with the forming of the ring trench; and separating the substrate or wafer or in a portion of the substrate or wafer from the carrier substrate. |
priorityDate |
2018-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |