| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0127 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B1-001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-0019
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N33-48721
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2018-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83ee57e7824fd8a0cd4420f9685fe5b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81f0532487a5e1698f13d47f246b24b3 |
| publicationDate |
2020-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-3685427-A1 |
| titleOfInvention |
Method to reduce pore diameter using atomic layer deposition and etching |
| abstract |
Methods for making well-controlled solid state nanopores and solid state nanopore arrays well controlled by a cyclic process including atomic layer deposition (ALD), or chemical vapor deposition (CVD), and an engraving. One or more elements are formed in a thin layer deposited on an upper side of a substrate. A dielectric material is deposited on top of the substrate having the element or elements in the thin layer. An etching process is then used to etch a portion of the dielectric material deposited on top of the substrate having the element (s) in the thin layer. The dielectric material deposition and etching processes are optionally repeated to reduce the size of the elements until a well-controlled nanopore is formed through the thin layer on the substrate. |
| priorityDate |
2017-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |