abstract |
A semiconductor device includes a pad electrode formed over a semiconductor substrate, a conductor pillar formed on the pad electrode, a cap film formed on the conductor pillar and made of a nickel film, a terminal formed in a wiring board, a metal film formed on the terminal and made of a nickel film containing phosphorus, a solder layer interposed between the cap film and the metal film and containing tin as a main component, and an alloy layer interposed between the solder layer and the metal film and containing tin and copper. |