| abstract |
The present invention has an object to provide a low-cost, durable silicon carbide member for a plasma processing apparatus. The silicon carbide member for a plasma processing apparatus of the present invention can be obtained by processing a sintered body which is produced with a method in which metal impurity is reduced to more than 20 ppm and 70 ppm or less, and an α-structure silicon carbide power having an average particle diameter of 0.3 to 3 µm and including 50 ppm or less of an Al impurity is mixed with 0.5 to 5 weight parts of a BC sintering aid, or with a sintering aid comprising AlOand YOwith total amount of 3 to 15 weight parts, and then a mixture of the α-structure silicon carbide power with the sintering aid is sintered in an argon atmosphere furnace or a high-frequency induction heating furnace. |