| abstract |
According to an aspect of the present inventive concept there is provided a method for forming vertical channel devices, the method comprising: nproviding a semiconductor structure including a substrate and a plurality of vertical channel structures, nproviding the vertical channel structures with wrap-around gates, ngrowing a doped semiconductor material selectively on top portions of each of at least a subset of said vertical channel structures, thereby forming enlarged top portions, and nforming a top electrode on each of the enlarged top portions. |