abstract |
Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1≦x<7, 1≦y≦13, and 1≦z≦13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching. |