Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_099413ae0cf5a2b6398b5151766cd260 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-471 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
filingDate |
2015-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e0ab4c111a3124d8aa9c247c9219941 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca3f25fab4d4f97a01bb4d967f990e26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb0ffac1d58d1f316f352a875c0964a9 |
publicationDate |
2016-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-3038159-A2 |
titleOfInvention |
Thin film transistor substrate and method of manufacturing the same |
abstract |
A thin film transistor substrate includes a gate electrode disposed on a base substrate, an active pattern overlapping the gate electrode, a source metal pattern comprising both a source electrode disposed on the active pattern and a drain electrode spaced apart from the source electrode, a buffer layer disposed on the source metal pattern and contacting the active pattern, a first passivation layer disposed on the buffer layer and a second passivation layer disposed on the first passivation layer. The density of hydrogen in the buffer layer is greater than the density of hydrogen in the first passivation layer and less than the density of hydrogen in the second passivation layer. |
priorityDate |
2014-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |