| abstract |
The present invention relates to the production of porous thin films, in particular by atomic layer deposition. The present invention relates to a process for producing porous films comprising n(a) performing a sequence of depositing a compound of general formula (I) from the gaseous state on a solid substrate at a temperature below 400 °C and contacting the deposited compound of general formula (I) with a compound capable of removing A 1 from the compound of general formula (I),n nwherein nR nis an alkyl or aryl group, nX nis hydrogen, a halogen, an amine, an alkoxy group or an aryloxy group, nA 1 , A 2 , A 3 nare independent of each other hydrogen, alkyl groups, or aryl groups and n n(b) removing R from the deposited compound of general formula (I). |