abstract |
The present invention is a high-purity 2-fluorobutane having a purity of 99.9 % by volume or more and a butene content of 1,000 ppm by volume or less, and a method for using the high-purity 2-fluorobutane as a dry etching gas. According to the present invention, a high-purity 2-fluorobutane that is suitable as a plasma reaction gas for semiconductors is provided. |