http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2787527-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a62555ff12316a9a118542896b4c0af7 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-465 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-465 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
filingDate | 2012-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb2b071d0eda67a343d596d0588632a9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4efd699dc11b63653bfb601f9bb8e20 |
publicationDate | 2014-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | EP-2787527-A1 |
titleOfInvention | Method for treating metallic oxide surface and method for preparing thin film transistor |
abstract | Embodiments of the present invention provide a method for surface treatment on a metal oxide and a method for preparing a thin film transistor. The method for surface treatment on a metal oxide comprises: utilizing plasma to perform a surface treatment on a device to be processed; the plasma comprises a mixture gas of an F-based gas and O 2 , and the device to be processed is a metal oxide or a manufactured article coated with a metal oxide. The embodiments provided by the present invention can reduce the contact resistance between a metal oxide and other electrodes, and improve the effect of ohmic contact of the metal oxide. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9818605-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10418391-B2 |
priorityDate | 2011-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.