| abstract |
A polymer for forming a resist protection film which is used in a liquid immersion lithography process to protect a photoresist layer, a composition for forming a resist protection film, and a method of forming a pattern of a semiconductor device using the composition are disclosed. The polymer for forming a resist protection film includes a repeating unit represented by Formula 1 below.n n In Formula 1, R 1 is a hydrogen atom (H), a fluorine atom (F), a methyl group (-CH 3 ), a C1-C20 fluoroalkyl group, or a C1-C5 hydroxyalkyl group, R 2 is a C1-C10 linear or branched alkylene group or alkylidene group, or a C5-C10 cycloalkylene group or cycloalkylidene group, X isn nwherein n is an integer of 0 to 5 and * denotes the remaining moiety of Formula 1 after excluding X, and m, the stoichiometric coefficient of X, is 1 or 2. |