http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2380202-A2

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filingDate 2009-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66c8a7d0d71084abd3f565626c79876e
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publicationDate 2011-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2380202-A2
titleOfInvention Stability enhancements in metal oxide semiconductor thin film transistors
abstract A plasma hydrogenated region in the dielectric layer of a semiconductor thin film transistor (TFT) structure improves the stability of the TFT. The TFT is a multilayer structure including an electrode, a dielectric layer disposed on the electrode, and a metal oxide semiconductor on the dielectric. Exposure of the dielectric layer to a hydrogen containing plasma prior to deposition of the semiconductor produces a plasma hydrogenated region at the semiconductor-dielectric interface. The plasma hydrogenated region incorporates hydrogen which decreases in concentration from semiconductor/dielectric interface into the bulk of one or both of the dielectric layer and the semiconductor layer.
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