http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2347438-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
filingDate 2009-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b36449c5422332ccf79a5b26ae96bc1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8acfc21ffa48c303813ea304e08be5a
publicationDate 2011-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2347438-A1
titleOfInvention Method of nonstoichiometric cvd dielectric film surface passivation for film roughness control
abstract A method is provided for reducing film surface roughness in Chemical Vapor Deposition (CVD) of dielectric films. The method may include removing dangling bonds from a film surface of a CVD dielectric film by a reactant. For reducing a surface roughness of a dielectric film, a further method may passivate a nonstoichiometric film surface of the dielectric film, or of a previous dielectric film, or of the dielectric film and of a previous dielectric film, by a reaclant gas in the vapor environment. The dielectric film may include at least one out of the following group: ultraviolet light transparent Silicon Nitride (UVSIN), Silicon Rich Oxide (SRO), Silicon Dioxide (SiO 2 ), Silicon Nitride (Si 3 N 4 ), Phosphosilicate Glass (PSG), or Silicon Oxynitride (SiON). The reactant gas may include at least one out of the following group: Ammonia (NH 3 ), Hydrogen (H 2 ), Nitrous Oxide (N 2 O), or Oxygen (O 2 ).
priorityDate 2008-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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