| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2202-03 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1646
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-2047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-14 |
| filingDate |
2009-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cba7a5c3ea4ca3842b6aac6cb7b110f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73821ee035f69e70c7d406700df64326
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da9246d8d4d4a8542a0ce71b6cbfc632 |
| publicationDate |
2011-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2337876-A1 |
| titleOfInvention |
Film formation method, film formation device,piezoelectric film, piezoelectric device and liquid discharge device |
| abstract |
A film formation method is provided, which allows high-level homogenization of film properties, such as composition, in the in-plane direction regardless of composition of a formed film and substrate size. When a film containing constituent elements of a target (T) is formed on a substrate (B) through vapor deposition using plasma with placing the substrate (B) and the target (T) to face each other, variation of plasma potential Vs (V) in the plasma space in the in-plane direction of the substrate (B) is controlled to be within plus or minus 10V at a distance of 2-3 cm from the surface of the target (T) toward the substrate (B). It is preferable that the film formation is carried out with controlling variation of gas pressure in the in-plane direction of the substrate (B) to be within plus or minus 1.5% at the distance of 2-3 cm from the surface of the target (T) toward the substrate (20). |
| priorityDate |
2008-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |