http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2053143-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 |
| filingDate | 2008-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d04be56a9d142d17374c31321a508079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_157a44235e9aeb86255b4f29e6ef2543 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cb5bf81e331188c23d218b365857d18 |
| publicationDate | 2009-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2053143-A2 |
| titleOfInvention | High quality silicon oxide films by remote plasma cvd from disilane precursors |
| abstract | A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor. |
| priorityDate | 2007-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 68.