| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_93d58c3fab3867279bd2c6afdfb5bf4b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-2001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3343 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-513 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2007-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d3b2eeec3ef40d64a65c50647e54709
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b19902fd026dd2c01520ed1f7832ec0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4464ec33afef2f231ac87e03f1ca1f98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cb4de3f0e426feb4d0b1e7a3003ed21 |
| publicationDate |
2009-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2050119-A1 |
| titleOfInvention |
Method and device for etching a substrate by means of a plasma |
| abstract |
In a method and device for etching a substrate by means of a plasma, the plasma is generated and accelerated at substantially sub-atmospheric pressure between a cathode and an anode of a plasma source (1) in a channel of system of at least one conductive cascaded plate between said cathode and anode. Said plasma is released from said plasma source to a treatment chamber (2) in which said substrate (9) is exposed to said plasma. The treatment chamber is sustained at a reduced, near vacuum pressure during operation. An alternating bias voltage is applied between said substrate and said plasma during said exposure. |
| priorityDate |
2006-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |