http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2020680-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
| filingDate | 2007-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0ec5072a8a8361337d469d41367b408 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d63cfce9636dcc04e12e15ea9b71f1a9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db40fca061e5d0de74e48225a8b62379 |
| publicationDate | 2009-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2020680-A1 |
| titleOfInvention | Polishing liquid for cmp and method of polishing |
| abstract | A CMP polishing liquid being capable of using in a chemical mechanical polishing comprising of: a first chemical mechanical polishing step of polishing a conductive substance layer of a substrate having an interlayer insulation film containing convex and concave regions on a surface thereof, a barrier layer coating along the surface of the interlayer insulation film, and the conductive substance layer coating the barrier layer while filling the concave regions, and thus exposing the barrier layer in the convex regions; and a second chemical mechanical polishing step of exposing the interlayer insulation film in the convex regions by polishing the barrier layer exposed in the first chemical mechanical polishing step; characterized in that a difference (B)-(A) is 650 Å or less , nwherein the (A) is a polishing amount of the interlayer insulation film in a field area when the interlayer insulation film in the field area having a width of 1,000 µm or more of the interlayer insulation film region formed on the substrate is polished to a depth of 400 Å or more; and nthe (B) is a polishing amount of the interlayer insulation film in a stripe-shaped patterned area having a total width of 1, 000 µm or more wherein a wiring metal region having a width of 90 µm and the interlayer insulation film region having a width of 10 µm are aligned alternately on the substrate when the interlayer insulation film in the field area having the width of 1, 000 µm or more of the interlayer insulation film region formed on the substrate is polished to a depth of 400 Å or more . |
| priorityDate | 2006-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 522.