| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3f215fbfa7b846b06ea55212565acfdc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2006-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20295f5e42552c0fee9616d6462a0a2b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2801aa938d063bf572e529292209d7db |
| publicationDate |
2008-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1881525-A1 |
| titleOfInvention |
Etching method, method for producing dielectric film of low dielectric constant, method for producing porous member, etching system and thin film forming equipment |
| abstract |
To provide an etching method employing a novel CVD system and an etching apparatus applicable to the method. n In the etching method, performed are an adsorption step of employing halogen radicals generated from a halogen through formation of a plasma thereof, and a precursor 24 formed from the halogen and a noble metal component generated through etching of a noble metal member 11 by the halogen radicals, wherein crystal nuclei of the precursor 24 are caused to be adsorbed on a substrate 3; and an etching step of anisotropically etching, in a thickness direction by the halogen radicals, a portion of the substrate 3 on which the crystal nuclei have been adsorbed. |
| priorityDate |
2005-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |