http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1763074-A2

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
filingDate 2006-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8262c92118fb715ad0f61c3c2721b4db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88652bbfecc0fe86f8495ed7bfa95649
publicationDate 2007-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1763074-A2
titleOfInvention Isolation for Semiconductor Devices
abstract Methods of forming and structures for isolation structures for semiconductor devices are disclosed. The isolation structures are wider at the bottom than at the top, providing the ability to further scale the size of semiconductor devices. A first etch process is used to form a first trench portion, and a second etch process or an oxidation process is used to form a second trench portion beneath the first trench portion. The second trench portion is wider than the first trench portion. A liner may form during the first trench portion on the sidewalls of the first trench portion that protects the first trench portion sidewalls during the second etch process, in one embodiment. Alternatively, a liner may be deposited on the sidewalls of the first trench portion, in another embodiment.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110098208-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103094286-A
priorityDate 2005-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1043769-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6376286-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02073668-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0256311-A2
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415783356
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID128159444
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559581
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID87486
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297

Total number of triples: 31.