| abstract |
The invention relates to a method for producing zirconium nitride layers by means of the CVD method (chemical vapor deposition) from a reactive gas on a substrate surface, the ZrN layer and its use. In the process, a zirconium tetrakis (dialkylamide) of the general formula Zr (NR 1 R 2 ) 4 where R 1 and R 2 denote identical or different, straight-chain or branched C 1 - to C 4 -alkyl radicals, as Zr precursor and a hydrazine derivative of the general formula H 2 N-NR 3 R 4 where R 3 is a straight-chain or branched C 1 - to C 4 -alkyl radical and R 4 is independently a C 1 - to C 4 -alkyl radical or H, used as a reactive gas. |