| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6a916e03e9b9d6e2e9655219cd75abb5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-976
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-978 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N-
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36 |
| filingDate |
2004-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_853911a4f26a14b8f4d6d946e055d7c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c2d41baea6cddfef95bee5f1918b087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_290cf6d2d564e48c48bc305aeea2a4ed |
| publicationDate |
2005-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1588219-A2 |
| titleOfInvention |
Semiconductor fabrication method for making small features |
| abstract |
A semiconductor fabrication method that includes forming a film (109) comprising an imaging layer (112) and an under layer (110) over a semiconductor substrate (102). The imaging layer (112) is patterned to produce a printed feature (116) having a printed dimension (124). The under layer (110) is then processed to produce a sloped sidewall void (120) in the under layer (110) wherein the void (120) has a finished dimension (126) in proximity to the underlying substrate that is less than the printed dimension. Processing the under layer (110) may include exposing the wafer to high density low pressure N2 plasma. |
| priorityDate |
2003-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |