| abstract |
The invention relates to an organic field effect transistornwith a substrate (1), a source electroden(2), a drain electrode (6), wherein betweennSource electrode (2) and drain electrode (6) organic,nsemiconducting material (3) is arranged, anGate electrode (5), which in the region of the semiconductingnMaterial (3) between the source electrode (2) andnDrain electrode (6) is arranged and one betweennGate electrode (5) and semiconducting material (3)narranged carrier barrier layer (4) and anProcess for its preparation.n n n According to the invention, the charge carrier barrier layer (4) arranged between gate electrode (5) and organic semiconducting material (3) comprises a semiconducting material. Preferably, the carrier barrier layer (4) is entirely made of a semiconductive material. |