| abstract |
A photoresist base material comprising an extremenultra-violet reactive organic compound of the followingnformula (1),n n wherein A is a central structure that is annaliphatic group having 1 to 50 carbon atoms, an aromaticngroup having 6 to 50 carbon atoms, an organic groupncontaining these together or an organic group having ancyclic structure formed by repetition of these, each of Bnto D is an extreme ultra-violet reactive group, a groupnhaving reactivity to the action of a chromophore active tonextreme ultra-violet, or a C 1 to C 50 aliphatic group, C 6 tonC 50 aromatic group, an organic group containing thesentogether or a substituent having a branched structure,ncontaining such a reactive group, X to Z are single bondsnor ether bonds, l to n are integers of 0 to 5 satisfying ln+ m + n ≥ 1, and A to D may contain a substituent having anheteroatom. The photoresist base material and a compositionnthereof enable ultrafine processing based on extreme ultra-violet. |