Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-2995 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-2962 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-50 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B25-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B17-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469 |
filingDate |
2004-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2702610aff676a9cd3f2ea85bb8e3506 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b24bbb4f3886c82a042ec564ec346ff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_224df69f89a283605039c0e3c1077f2e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6d79cde08b870d5b5819b7c84d6c79e |
publicationDate |
2005-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-1493773-A1 |
titleOfInvention |
Siloxane-based resin and semiconductor interlayer insulating film made thereof |
abstract |
Disclosed herein are a siloxane-based resin havingnnovel structure and a semiconductor interlayer insulatingnfilm using the same. The siloxane-based resins have so lowndielectric constant in addition to excellent mechanicalnproperties that they are useful materials for an insulatingnfilm between interconnect layers of a semiconductor device. |
priorityDate |
2003-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |