| abstract |
A chemical vapor deposition process for preparing a low dielectric constantnorganosilicate (OSG) having enhanced mechanical properties by adjusting the amount ofnorganic groups, such as methyl groups, within the mixture is disclosed herein. In onenembodiment of the present invention, the OSG film is deposited from a mixturencomprising a first silicon-containing precursor that comprises from 3 to 4 Si-O bonds pernSi atom, from 0 to 1 of bonds selected from the group consisting of Si-H, Si-Br, and Si-Clnbonds per Si atom and no Si-C bonds and a second silicon-containing precursor thatncomprises at least one Si-C bond per Si atom. In another embodiment of the presentninvention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containingnprecursor. In either embodiment, the mixture may further contain a porogennprecursor to provide a porous OSG film. |