| abstract |
A process is described for depositing a metal film on a substrate surface having andiffusion barrier layer deposited thereupon. In one embodiment, the process includes:nproviding a surface of the diffusion barrier layer that is substantially free of an elementalnmetal and forming the metal film on at least a portion of the surface via deposition bynusing a organometallic precursor. In certain embodiments, the surface of the diffusionnbarrier layer may be exposed to an adhesion promoting agent prior to or during at least anportion of the forming step. Suitable adhesion promoting agents include nitrogen,nnitrogen-containing compounds, carbon-containing compounds, carbon and nitrogenncontaining compounds, silicon-containing compounds, silicon and carbon containingncompounds, silicon, carbon, and nitrogen containing compounds, and mixtures thereof.nThe process of the present invention provides substrates having enhanced adhesionnbetween the diffusion barrier layer and the metal film. |